
Wide Bandgap Semiconductor Spintronics e-bog
1021,49 DKK
(inkl. moms 1276,86 DKK)
This book is focused on the spintronic properties of III-V nitride semiconductors. Particular attention is paid to the comparison between zinc blende GaAs- and wurtzite GaN-based structures, where the Rashba spin-orbit interaction plays a crucial role in voltage-controlled spin engineering. The book also deals with topological insulators, a new cla
E-bog
1021,49 DKK
Forlag
Jenny Stanford Publishing
Udgivet
30 marts 2016
Længde
196 sider
Genrer
PHFC
Sprog
English
Format
pdf
Beskyttelse
LCP
ISBN
9789814669719
This book is focused on the spintronic properties of III-V nitride semiconductors. Particular attention is paid to the comparison between zinc blende GaAs- and wurtzite GaN-based structures, where the Rashba spin-orbit interaction plays a crucial role in voltage-controlled spin engineering. The book also deals with topological insulators, a new cla