High Magnetic Fields in Semiconductor Physics III (e-bog) af -
Landwehr, Gottfried (redaktør)

High Magnetic Fields in Semiconductor Physics III e-bog

1094,16 DKK (ekskl. moms 875,33 DKK)
High magnetic fields have, for a long time, been animportant tool in the investigation of the electronicstructure of semiconductors. In recent yearsstudies ofheterostructures and superlattices have predominated, andthis emphasis is reflected in these proceedings. Thecontributions concentrate on experiments using transport andoptical methods, but recent theoretical developments area…
High magnetic fields have, for a long time, been animportant tool in the investigation of the electronicstructure of semiconductors. In recent yearsstudies ofheterostructures and superlattices have predominated, andthis emphasis is reflected in these proceedings. Thecontributions concentrate on experiments using transport andoptical methods, but recent theoretical developments arealso covered. Special attention is paid to the quantum Halleffect, including the problem of edge currents, theinfluence of contacts, and Wigner condensation in thefractional quantum Hall effect regime. The 27 invited contributions by renowned expertsprovide anexcellent survey of the field that is complemented bynumerous contributed papers.
E-bog 1094,16 DKK
Forfattere Landwehr, Gottfried (redaktør)
Forlag Springer
Udgivet 06.12.2012
Genrer Materials science
Sprog English
Format pdf
Beskyttelse LCP
ISBN 9783642844089
High magnetic fields have, for a long time, been animportant tool in the investigation of the electronicstructure of semiconductors. In recent yearsstudies ofheterostructures and superlattices have predominated, andthis emphasis is reflected in these proceedings. Thecontributions concentrate on experiments using transport andoptical methods, but recent theoretical developments arealso covered. Special attention is paid to the quantum Halleffect, including the problem of edge currents, theinfluence of contacts, and Wigner condensation in thefractional quantum Hall effect regime. The 27 invited contributions by renowned expertsprovide anexcellent survey of the field that is complemented bynumerous contributed papers.