Nitride Wide Bandgap Semiconductor Material and Electronic Devices e-bog
403,64 DKK
(inkl. moms 504,55 DKK)
This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very suitable for electronic devices used in microwave power amplification, high-voltage switches, and high-speed dig...
E-bog
403,64 DKK
Forlag
CRC Press
Udgivet
3 november 2016
Længde
392 sider
Genrer
TJFD5
Sprog
English
Format
pdf
Beskyttelse
LCP
ISBN
9781498745130
This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very suitable for electronic devices used in microwave power amplification, high-voltage switches, and high-speed digital integrated circuits.